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Magazine Name : Ieee Transactions On Electron Devices

Year : 2003 Volume number : 50 Issue: 08

Investigation Of A New Ingap-Ingaas Pseudomorphic Double Doped-Channel Heterostructure Field-Effect Transistor (Pddchfet) (Article)
Subject: Schottky , Double Doped-Channel (Ddc)
Author: Hung-Ming Chuang      Wen-Chau Liu      Xin-Da Liao     
page:      1717 - 1723
Nonlocal Effects In Thin 4h-Sic Uv Avalanche Photodiodes (Article)
Subject: Breakdown Voltage , Dead Space , Impact Ionization
Author: B K Ng      P R David      Graham J Rees     
page:      1724 - 1732
Experimental And Numerical Assessment Of Gate-Lag Phenomena In Algaas-Gaas Heterostructure Field-Effect Transistors (Fets) (Article)
Subject: Gallium Compounds , Transient Response
Author: Giovanni Verzellesi      E Zanoni      Andrea Mazzanti     
page:      1733 - 1740
Silicon Carbide Pinch Rectifiers Using A Dual-Metal Ti-Ni2si Schottky Barrier (Article)
Subject: Sic Schottky Diodes , Dual-Metal Pinch Rectifiers
Author: Vito Raineri      Francesco Via      Fabrizio Roccaforte     
page:      1741 - 1748
Photo-Cvd Sio2 Layers On Algan And Algan-Gan Moshfet (Article)
Subject: Gan , Sio2
Author: Y Z Chiou      S J Chang      Y K Su     
page:      1748 - 1752
High Activation Of Sb During Solid-Phase Epitaxy And Deactivation During Subsequent Thermal Process (Article)
Subject: Activation , Deactivation
Author: Kunihiro Suzuki      Hiroko Tashiro     
page:      1753 - 1757
Improvement Of Address Discharge Characteristics Using Asymmetric Variable-Width Scan Waveform In Ac Plasma Display Panel (Article)
Subject: Plasma Display Panel , Dynamic Voltage Margin
Author: Heung-Sik Tae      Sung-Ii Chien     
page:      1758 - 1765
Nitride-Based Green Light-Emitting Diodes With High Temperature Gan Barrier Layers (Article)
Subject: Reliability , Ingan-Gan
Author: W C Lai      J M Tsai      J K Sheu     
page:      1766 - 1770
Trends In The Ultimate Breakdown Strength Of High Dielectric-Constant Materials (Article)
Subject: Oxide , Mos Devices , Reliability
Author: Joe W Mcpherson      Jinyoung Kim      Ajit Shanware     
page:      1771 - 1778
Scaling Effects On Gate Leakage Current (Article)
Subject: Device Simulation , Band-Gap Narrowing (Bgn)
Author: Shin-Ichi Takagi      Hiroshi Watanabe      Kazuya Matsuzawa     
page:      1779 - 1784
Harmonic Gain And Noise In A Frequency-Doubling Gyro-Amplifier (Article)
Subject: Nonlinear Gain , Harmonic Gyrotron
Author: John C Rodgers      Thomas M Antonsen      Victor L Granatstein     
page:      1785 - 1792
Analytical Solutions To The One-Dimensional Oxide-Silicon-Oxide System (Article)
Subject: Analytical Solution , Double-Gate (Dg)
Author: Man Wong      Xuejie Shi     
page:      1793 - 1800
Semisuperjunction Mosfets New Design Concept For Lower On-Resistance And Softer Reverse-Recovery Body Diode (Article)
Subject: Superjunction , High-Voltage Device
Author: Wataru Saito      Satoshi Aida      Ichiro Omura     
page:      1801 - 1806
Low-Temperature Poly-Sige Alloy Growth Of High Gain/Speed Pin Infrared Photosensor With Gold-Induced Laterel Crystallization (Au-Ilc) (Article)
Subject: Response Speed , Optical Gain
Author: C Y Chen      Jyh-Jier Ho     
page:      1807 - 1812
Plastic Micromachining Assisted By Ultraviolet Illumination (Article)
Subject: Pet , Micro-Gear
Author: Teymour Maleki      Shamsoddin Mohajerzadeh      Ali Afzali- Kusha     
page:      1813 - 1815
A Compact Model For Flicker Noise In Mos Transistors For Analog Circuit Design (Article)
Subject: Mosfet , Noise
Author: Carlos Galup- Montoro      Alfredo Arnaud     
page:      1815 - 1818